| PART |
Description |
Maker |
| M470L0914BT0 |
8Mx64 200pin DDR SDRAM SODIMM based on 8Mx16 Data Sheet
|
Samsung Electronic
|
| HMP125S6EFR8C-C4 HMP125S6EFR8C-S5 HMP125S6EFR8C-S6 |
256M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
256M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200
200pin Unbuffered DDR2 SDRAM SO-DIMMs
|
HYNIX SEMICONDUCTOR INC
Hynix Semiconductor, Inc.
|
| HYS64D64020GU-7-B HYS64D64320GU-5-B HYS64D64320GU- |
DDR SDRAM Modules - 512MB (64Mx64) PC2100 2-bank
DDR SDRAM Modules - 512MB (64Mx64) PC3200 2-bank
DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC2700 1-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2700 2-bank
DDR SDRAM Modules - 512MB (64Mx72) PC2700 2-bank
DDR SDRAM Modules - 512MB (32Mx72) PC2100 2-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank
184-Pin Unbuffered Dual-In-Line Memory Modules
DDR SDRAM Modules - 256MB (32Mx64) PC2100 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC3200 1-bank
DDR SDRAM Modules - 512MB (64Mx72) PC3200 2-bank
DDR SDRAM Modules - 256MB (32Mx64) PC3200 1-bank
DDR SDRAM Modules - 256MB (32Mx72) PC3200 2-bank
|
Infineon
|
| P13B16212A P13B16212V M464S3254DTS PC133 M464S3254 |
Protective Eyeglasses RoHS Compliant: NA
Personal protection, Spectacles; RoHS Compliant: NA
Electrically Conductive Floor Mat 1/8 inch x 4 feet x 8 feet RoHS Compliant: NA
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD
32Mx64 SDRAM SODIMM based on 16Mx16 4Banks 8K Refresh3.3V Synchronous DRAMs with SPD
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HYMD132645BL8J-J HYMD116G725BL8-M HYMD116G725BL8-L |
32Mx64|2.5V|J|x16|DDR SDRAM - Unbuffered DIMM 256MB
Unbuffered DDR SDRAM DIMM
SDRAM|DDR|16MX72|CMOS|DIMM|184PIN|PLASTIC
|
Hynix Semiconductor
|
| W3EG6432S-D3 W3EG6432S335D3 W3EG6432S403JD3 W3EG64 |
256MB - 32Mx64 DDR SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| WV3EG32M64ETSU335D3MG WV3EG32M64ETSU335D3SG WV3EG3 |
256MB - 32Mx64 DDR SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| HYMD564M646BL6-D43 HYMD564M646BL6-H HYMD564M646BL6 |
200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. (TSOP)
|
Hynix Semiconductor
|
| HYMP112S64M8-C4 HYMP564S646-E3 HYMP532S64P6-E3 |
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. 128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. 64M X 64 DDR DRAM MODULE, 0.6 ns, ZMA200
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| M470L1624FU0-CA2 M470L1624FU0-CB3 |
DDR SDRAM SODIMM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M470L3224FU0 M485L1624FU0-CB3 M470L1624FU0-CA2 M47 |
DDR SDRAM SODIMM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| M470T6464AZ3-CLE6_D5_CC M470T5669AZ0-CLE6/D5/CC M4 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb A-die 64-bit Non-ECC
|
Samsung semiconductor
|
